SEOUL, Sept. 18 (Xinhua) -- Samsung Electronics, the world's largest maker of memory chips, said Tuesday that it started the mass production of 2 gigabyte (GB), lower power double-data-rate 3 (LPDDR3) mobile memory chips based on 30 nanometer (nm) class technology.
The industry's first 30nm-class based 2GB LPDDR3 memory chips will be used for next-generation mobile devices, according to an e- mailed statement. LPDDR3 is needed for fast processors, high resolution displays and 3D graphics in tablets and smartphones.
The DRAM chip came just 10 months after Samsung began producing the 30nm-class 2GB LPDDR2 memory in October 2011. The new LPDDR3 utilizes four LPDDR3 chips stacked together, Samsung said.
The new 2GB LPDDR3 DRAM chip can transfer data at up to 1,600 megatbits per second (Mbps) per pin, which is around 50 percent faster than a LPDDR2 DRAM. On the package level, it provides a data transmission rate up to 12.8 gigabytes per second (GB/s), which will enable playing of full HD video content in real-time on smartphones and tables.
"We will embrace greater technical cooperation with industry leading mobile device makers, as we continue to provide timely next-generation memory solutions like 2GB LPDDR3 DRAM, in helping to accelerate growth of the mobile memory market," said Hong Wanhoon, executive vice president of Samsung's memory sales & marketing division.